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4V Drive Nch MOSFET RSH090N03 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Dimensions (Unit : mm) SOP8 Packaging specifications Package Type RSH090N03 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) 2 1 (2) (3) (4) (1) (2) (3) (4) Absolute maximum ratings (Ta=25C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Source Current (Body Diode) Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP 1 Is Isp PD 1 2 Limits 30 20 9.0 36 1.6 18 2 150 -55 to +150 Unit V V A A A A W (1) 1 ESD Protection Diode. 2 Body Diode. (1) (2) (3) (4) (5) (6) (7) (8) Source Source Source Gate Drain Drain Drain Drain A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. Total Power Dissipation Channel Temperature Storage Temperature 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board. Tch Tstg C C Thermal resistance Parameter Channel to Ambient Mounted on a ceramic board. Symbol Rth (ch-a) Limits 62.5 Unit C / W www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.12 - Rev.A RSH090N03 Electrical characteristics (Ta=25C) Parameter Gate-Source Leakage Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Pulsed Data Sheet Symbol IGSS V (BR)DSS IDSS VGS (th) RDS (on) l Yfs l Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Min. - 30 - 1.0 - - - 6.0 - - - - - - - - - - Typ. - - - - 11 15 17 - 810 225 160 10 13 46 15 11 2.5 4.5 Max. 10 - 1 2.5 16 22 24 - - - - - - - - 15 - - Unit A V A V Test Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=9A, VGS=10V m ID=9A, VGS=4.5V ID=9A, VGS=4V S pF pF pF ns ns ns ns nC nC nC ID=9A, VDS=10V VDS=10V VGS=0V f=1MHz ID=4.5A, VDD 15V VGS=10V RL=3.33 RG =10 VDD 15V VGS=5V ID=9A Body diode characteristics (Source-Drain) (Ta=25C) Parameter Forward Voltage Pulsed Symbol VSD Min. - Typ. - Max. 1.2 Unit V Test Conditions Is=6.4A, VGS=0V www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.12 - Rev.A RSH090N03 Electrical characteristic curves 10000 Data Sheet Ciss 1000 1000 tf td(off) GATE-SOURCE VOLTAGE: VGS (V) Ta=25C f=1MHz VGS=0V 10000 Ta=25C VDD=15V VGS=10V RG=10 Pulsed 8 Ta=25 C 7 VDD=15V ID=9A 6 RG=10 Pulsed 5 4 3 2 1 0 0 2 4 6 8 10 12 CAPACITANCE : C (pF) Coss SWITCHING TIME : t (ns) 100 Crss 100 td(on) 10 tr 1 0.01 10 0.01 0.1 1 10 100 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) TOTAL GATE CHANGE: Qg (nC) Fig.1 Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (m) 100 Ta=25 C pulsed SOURCE CURRENT : Is (A) 100 VGS=0V Pulsed Ta=-25C 25C 75C 125C DREIN CURRENT : ID(A) 1 10 ID=9A 0.1 Ta=125C 75C 25C -25C 50 1 0.01 ID=4.5A 0.1 VDS=10V 0.001 Pulsed 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0 2 4 0.01 6 8 10 12 14 16 0 0.5 1.0 1.5 GATE - SOURCE VOLTAGE : VGS(V) GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD(A) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Source-Current vs. Source-Drain Voltage 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (m) 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (m) VGS=4.5V Pulsed 1000 Ta=125C 75C 25C -25C 1000 Ta=125C 75C 25C -25C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (m) VGS=10V Pulsed 10000 VGS=4V Pulsed 1000 Ta=125C 75C 25C -25C 100 100 100 10 10 10 1 0.1 1 DRAIN CURRENT : I D(A) 10 1 0.1 1 0.1 1 DRAIN CURRENT : ID(A) 10 1 DRAIN CURRENT : I D(A) 10 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (1) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (2) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (3) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 3/3 2009.12 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. R0039A |
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